Lattice Semiconductor LCMXO2280C-3BN256C RoHS: yes Memory Type: SRAM Number of Macrocells: 1140 Delay Time: 5.1 ns Number of Programmable I/Os: 211 Operating Supply Voltage: 1.8 V, 2.5 V, 3.3 V Maximum Operating Temperature: + 85 C Minimum Operating Temperature: 0 C Package / Case: CABGA Mounting Style: SMD/SMT Factory Pack Quantity: 595 Supply Current: 23 mA Supply Voltage - Max: 3.465 V Supply Voltage - Min: 1.71 V Frequency: 420 MHz Number of Pins: 256 Supply Voltage (DC): 1.71 V (min) Alternative: LATTICE LCMXO2280C-3BN256C,LAT LCMXO2280C-3BN256C,LATT LCMXO2280C-3BN256C,LATTICE SEMI LCMXO2280C-3BN256C,LATTIC LCMXO2280C-3BN256C,LATICE LCMXO2280C-3BN256C,LATTICE SEMICONDUCTOR CORP LCMXO2280C-3BN256C,Lattice Semiconductor Corporation LCMXO2280C-3BN256C,LITTICE LCMXO2280C-3BN256C,LATTICE SEMICONDUCTO LCMXO2280C-3BN256C,LSD LCMXO2280C-3BN256C,LATTI LCMXO2280C-3BN256C,ALTT LCMXO2280C-3BN256C,LATTICE SEMICONDUCTOR COR LCMXO2280C-3BN256C,SAL LCMXO2280C-3BN256C,Carley LCMXO2280C-3BN256C,LATTICE/A LCMXO2280C-3BN256C,LATTICE/S LCMXO2280C-3BN256C,LATTICE SEMICON LCMXO2280C-3BN256C,LTTCE LCMXO2280C-3BN256C,LATTICE/M LCMXO2280C-3BN256C,LATTICE MIL LCMXO2280C-3BN256C,LATTICE SEMICO LCMXO2280C-3BN256C,LLATTICE LCMXO2280C-3BN256C,GAL LCMXO2280C-3BN256C